Growth and thermal properties of InSe crystal by using the ground simulation apparatus of China space station-Reference-Cited by-同舟云学术

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Growth and thermal properties of InSe crystal by using the ground simulation apparatus of China space station

Published:2023-04 Issue: Volume:337 Page:133970
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Jin Min^ORCID,Lin Siqi,Xue Liang,Deng Weijie,Pan Xiuhong,Liu Xuechao^ORCID

Funder

National Key Research and Development Program of China

Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing

2. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

3. Improvement of the thermoelectric performance of InSe-based alloys doped with Sn

4. Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing

5. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

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