Oxygen adsorption on wet-chemically cleaned GaN(0001) surface studied by coaxial impact collision ion scattering spectroscopy-Reference-Cited by-同舟云学术

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Oxygen adsorption on wet-chemically cleaned GaN(0001) surface studied by coaxial impact collision ion scattering spectroscopy

Published:2022-01 Issue: Volume:307 Page:130988
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Abe Koji

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. GaN power switches on the rise: Demonstrated benefits and unrealized potentials

2. Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

3. Recent progress of GaN power devices for automotive applications

4. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

5. Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO₂(001)<110> at Glancing Incidence;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

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