Growth mechanism of In–doped β–Ga 2 O 3 nanowires deposited by radio frequency powder sputtering
Author:
Funder
Chosun University
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Competing phases in epitaxial SnO2 thin films deposited on sapphire(0001) substrates using radio-frequency powder sputtering;Ceramics International;2022-10
2. Competing Phases in Epitaxial Sno2 Thin Films Deposited on Sapphire(0001) Substrates Using Radio-Frequency Powder Sputtering;SSRN Electronic Journal;2022
3. Enhancement of the properties of a Beta-GA2 O3-based diode using fluorine-doped Ga2O3 films deposited by a liquid-phase method;Functional Materials Letters;2021-07-28
4. Effect of transition metals doping on electronic structure and optical properties of β-Ga2O3;Materials Research Express;2021-02-01
5. The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector;Sensors;2019-12-02
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