Grain growth, agglomeration and interfacial reaction of copper interconnects-Reference-Cited by-同舟云学术

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Grain growth, agglomeration and interfacial reaction of copper interconnects

Published:2002-12 Issue: Volume:420-421 Page:398-402
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yang Ching-Yu,Jeng J.S,Chen J.S

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Mechanical and Dielectric Properties of Low Permittivity Dielectric Materials

2. Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle Process

3. Transition metals in silicon

4. Diffusion of Metals in Silicon Dioxide

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