Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Temperature dependence of I–V characteristics of vacuum triodes from 24 to 300 K
2. Planar-processed tungsten and polysilicon vacuum microelectronic devices with integral cavity sealing
3. Triode characteristics and vacuum considerations of evaporated silicon microdevices
4. Monolithic Fabrication and Electrical Characteristics of Polycrystalline Silicon Field Emitters and Thin Film Transistor
5. S.E. Pullen, M. Huang, S.E. Hug, E.C. Boswell, P.D. Prewett, G.D.W. Smith, P.R. Wilshow, Proc. 9th Int. Vac. Microelectr. Conf., Nevski curier, Russia, 1996, p. 211.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献