Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection-Reference-Cited by-同舟云学术

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Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection

Published:2001-10 Issue:1-2 Volume:397 Page:186-193
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Huang J.S,Deng X.J,Yih P.H,Shofner T.L,Obeng Y.S,Darling C

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Electromigration‐induced drift failure of via contacts in multilevel metallization

2. L.J. Elliott, T. Spooner, J.H. Rose, R. Shuman, in: A.S. Oates, W.F. Filter, R. Rosenberg, A.L. Greer, K. Gadepally (Eds.). Proceedings of the Materials Research Society Symposium, vol. 391, San Francisco, CA, USA, April 17–21, 1995, p. 459.

3. Stress-voiding in tungsten-plug interconnect systems induced by high-temperature processing

4. The dependence of W-plug via EM performance on via size

5. S. Domae, H. Masuda, K. Tateiwa, Y. Kato, M. Fujimoto, in: J.E. Klema (Ed.). Proceedings of the Thirty Sixth Annual IEEE Reliability Physics Symposium, Reno, NA, USA, March 31–April 2, 1998, p. 318.

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3. Improvement of Crystallographic Quality of Electroplated Copper Thin-Film Interconnections for Through-Silicon Vias;Japanese Journal of Applied Physics;2013-04-01

4. A case study on the impact of local material chemistry on the mechanical reliability of packaged integrated circuits: Correlation of the packaging fallout to the chemistry of passivation dielectrics;Thin Solid Films;2012-05

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