The effect of silicon ion implantation on the structure of tantalum–silicon contacts-Reference-Cited by-同舟云学术

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The effect of silicon ion implantation on the structure of tantalum–silicon contacts

Published:2004-02 Issue:1-2 Volume:449 Page:187-191
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Peikert M.,Bhandari R.,Wieser E.,Wenzel C.,Lipp D.,Reuther H.,Mücklich A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. The formation of titanium silicide by arsenic ion beam mixing and rapid thermal annealing

2. Interface mixing in Ta/Si bilayers with Ar ions

3. Refractory metal silicide formation induced by As+implantation

4. Implant and impurity redistribution during ion induced TaSi2 formation

5. The morphologies and characteristics of reactively formed TaSi2 films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

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