Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation-Reference-Cited by-同舟云学术

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Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation

Published:2020-10 Issue: Volume:260 Page:114616
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kumar Aggarwal Vishal,Ghatak Ankita,Kanjilal Dinakar,Kabiraj Debdulal,Singha Achintya,Bysakh Sandip,Kumar Medda Samar,Chakraborty Supriya,Raychaudhuri A.K.

Funder

Science and Engineering Research Board

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Silicon-on-insulator: materials aspects and applications

2. All silicon infrared photodiodes: photo response and effects of processing temperature

3. Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Ge on silicon-on-insulator wafer by plasma enhanced chemical vapor deposition and fabrication of microline photodetector using the Ge layer;Materials Science and Engineering: B;2024-04

2. Composition-adjustable silicon-germanium alloy films based on porous silicon matrices;Materials Today Communications;2024-03

3. Influence of Barrier Layers on ZrCoCe Getter Film Performance;Materials;2023-04-06

4. In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes;Nanoscale;2021

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