Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure-Reference-Cited by-同舟云学术

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Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Published:2023-06 Issue: Volume:292 Page:116423
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Tian Jian,Liu Lei,Lu Feifei,Qian Yunsheng

Funder

National Natural Science Foundation of China

Jiangsu Province Natural Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer;Wang;Appl. Phys. Lett.,2009

2. Self-Organized GaN Quantum Wire UV Lasers;Choi;J. Phys. Chem. B,2003

3. J. Brault, B. Damilano, A. Kahoulia, S. Chenot, M. Leroux, B. Vinter, J. Massies, Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes, J. Crystal Growth, 363 (2013) 282–286.

4. M. Sun, M.R. Fiorentin, U. Schwingenschlögl, M. Palummo, Excitons and light-emission in semiconducting MoSi2X4 two-dimensional materials, npj 2d Mater. Appl., 6 (2022) 81.

5. Fabrication of a g-C3N4/MoS2 photocatalyst for enhanced RhB degradation;Cui;Physica E,2022

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