N and p-type doping of PECVD a-SiC:H obtained under “silane starving plasma” condition with and without hydrogen dilution
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Growth of device quality p-type μc-Si:H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells
2. Optoelectronic characteristics of a-SiC:H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si:H
3. Physics of Amorphous Silicon–Carbon Alloys
4. Wide gap a-Si1−xCx:H thin films obtained under starving plasma deposition conditions
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1. Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films;Journal of Electronic Materials;2024-05-24
2. Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications;Materials;2021-10-24
3. Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface;Semiconductor Science and Technology;2018-07-11
4. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films;SOLID STATE ELECTRON;2018
5. Amorphous Carbon-Based Semiconductor Capable of Controlling Its Optical Gap and Conductivity by Incorporating Silicon and Nitrogen Atoms;ECS Journal of Solid State Science and Technology;2016
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