Novel enhanced stressors with graded encapsulated SiGe embedded in the source and drain areas-Reference-Cited by-同舟云学术

Novel enhanced stressors with graded encapsulated SiGe embedded in the source and drain areas

Published:2008-12 Issue: Volume:154-155 Page:95-97
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Naumann Andreas,Kronholz Stephan,Mowry Anthony,Ostermay Ina,Bierstedt Helmut,Trui Bernhard,Dittmar Kornelia,Kücher Peter,Bartha Johann W.,Kammler Thorsten

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

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2. M. Horstmann, A. Wei, T. Kammler, J. Höntschel, H. Bierstedt, T. Feudel, K. Frohberg, M. Gerhardt, A. Hellmich, K. Hempel, J. Hohage, P. Javorka, J. Klais, G. Koerner, M. Lenski, A. Neu, R. Otterbach, P. Press, C. Reichel, M.Trentsch, B. Trui, H. Salz, M. Schaller, H.-J. Engelmann, O. Herzog, H. Ruelke, P. Hübler, R. Stephan, D. Greenlaw, M. Raab, N. Kepler, H. Chen, D. Chidambarrao, D. Fried, J. Holt, W. Lee, H. Nii, S. Panda, T. Sato, A. Waite, S. Luning, K. Rim, D. Schepis, M. Khare, S.F. Huang, J. Pellerin and L.T. Su, IEDM Tech. Dig. 2005, pp. 243–246.

3. Sidewall Dislocations in Embedded SiGe Source/Drain Areas of MOSFETs and Their Impact on the Device Performance

4. Effectiveness of Embedded-SiGe in Strained-SOI Substrates and Implications on Embedded-SiGe Stress Transfer Mechanics