Accurate electrical activation characterization of CMOS ultra-shallow profiles-Reference-Cited by-同舟云学术

Accurate electrical activation characterization of CMOS ultra-shallow profiles

Published:2004-12 Issue: Volume:114-115 Page:166-173
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Clarysse T.,Dortu F.,Vanhaeren D.,Hoflijk I.,Geenen L.,Janssens T.,Loo R.,Vandervorst W.,Pawlak B.J.,Ouzeaud V.,Defranoux C.,Faifer V.N.,Current M.I.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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4. Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

5. The Relation Between Two‐Probe and Four‐Probe Resistances on Nonuniform Structures

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