Characteristics of non-annealed λ=1.35μm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy-Reference-Cited by-同舟云学术

Characteristics of non-annealed λ=1.35μm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Published:2006-07 Issue:1-3 Volume:131 Page:40-44
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Loke W.K.,Yoon S.F.,Wicaksono S.,Ng B.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

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3. J.R. Meyer, C.F. Gmachl, Proceedings of SPIE-Volume 4651 Novel In-Plane Semiconductor Lasers, 101 (2002).

4. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

5. Compositional variation in as-grown GaInNAs/GaAs quantum well structures

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