Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate
Author:
Funder
MOEA project
NSC project
Publisher
Elsevier BV
Subject
Industrial and Manufacturing Engineering,Energy Engineering and Power Technology
Reference8 articles.
1. GaN on Si HEMT with 65% power added efficiency at 10 GHz;Dumka;Electron. Lett.,2010
2. Integrated thermal management techniques for high power electronic devices;McGlen;Appl. Therm. Eng.,2004
3. Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage;Chang;Electron. Lett.,2010
4. 30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs;Chang;IEEE Elec. Device Lett.,2010
5. High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance;Chen;Electron. Lett.,2010
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