p-n Junction characteristics and ultimate performances of high quality 8–14 μm Hg1−xCdxTe implanted photodetectors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
1. CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS
2. TYPE CONVERSION ANDn‐pJUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENT
3. (Hg,Cd)Te Photodiode Laser Receivers for the 1–3-μ Spectral Region
4. Hg‐implanted Hg1−x Cdx Te infrared photovoltaic detectors in the 8‐ to 14‐μm range
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1. Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe;Journal of Electronic Materials;2011-05-04
2. Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy;Russian Physics Journal;2008-10
3. Analysis of the ideality factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region;Semiconductor Science and Technology;1997-04-01
4. Photovoltaic effect and carrier transport mechanisms in Hg1-Mnxtdiodes;Journal of Electronic Materials;1987-11
5. Zener current contribution to the resistance-area product of 8- to 14-µm Hg1-xCdxTe photodiodes;IEEE Transactions on Electron Devices;1986-10
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