Negative resistance with Auger suppression in near-intrinsic, low-bandgap photo-diode structures-Reference-Cited by-同舟云学术

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Negative resistance with Auger suppression in near-intrinsic, low-bandgap photo-diode structures

Published:1987-11 Issue:6 Volume:27 Page:361-369
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

White A.M.

Publisher

Elsevier BV

Subject

General Engineering

Reference6 articles.

1. Auger suppression and negative resistance in low gap PIN diode structures

2. Nonequilibrium devices for infra-red detection

3. Non-equilibrium modes of operation for infrared detectors

4. Recombination in a graded n-n+contact region in a narrow-gap semiconductor

5. The characteristics of minority-carrier exclusion in narrow direct gap semiconductors

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2. Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling;Journal of Applied Physics;2010-10

3. Modeling and Design Considerations of HgCdTe Infrared Photodiodes under Nonequilibrium Operation;Journal of Electronic Materials;2007-04-24

4. Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature;Microelectronics Journal;2007-02

5. Long-wavelength HgCdTe negative luminescent devices;Applied Physics Letters;2001-08-20

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