Calculation of the carrier lifetime in Hg1−xZnxTe
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference33 articles.
1. The bonding properties of mercury–cadmium telluride
2. Effects influencing the structural integrity of semiconductors and their alloys
3. Mercury zinc telluride, a new narrow‐gap semiconductor
4. Properties of Hg1−xZnxTe grown by liquid‐phase epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mercury zinc telluride solid solutions: optical parameters;Infrared Physics & Technology;1998-03
2. Recombination and ionization in narrow gap semiconductors;Physics Reports;1995-06
3. Near room-temperature IR photo-detectors;Infrared Physics;1991-01
4. The performance of Hg1−x Zn x Te photodiodes;Applied Physics A Solids and Surfaces;1990-04
5. Auger-limited carrier lifetime in HgZnTe ambient temperature 10.6μm photoresistors;Infrared Physics;1989-01
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