Structural characterization of Si1−xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition-Reference-Cited by-同舟云学术

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Structural characterization of Si1−xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition

Published:2000-09 Issue:1-4 Volume:164 Page:35-41
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bozzo S.,Lazzari J.-L.,Holländer B.,Coudreau C.,Ronda A.,Mantl S.,D'Avitaya F.A.,Derrien J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Recent advances with SiGe heterojunction bipolar transistors

2. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

3. Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient characteristics of carrier transport in an isotopically enriched 28Si/SiGe undoped heterostructure;Applied Physics Letters;2024-08-26

2. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells;Solar Energy Materials and Solar Cells;2016-01

3. Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers;MRS Proceedings;2007

4. Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1–xGex/Si type-II quantum wells;Journal of Luminescence;2006-12

5. Wave function engineering in W designed strained-compensated Si/Si1−xGex/Si type II quantum wells for 1.55μm optical properties;Optical Materials;2005-02

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