Improvement of Y2O3/Si interface for FeRAM application-Reference-Cited by-同舟云学术

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Improvement of Y2O3/Si interface for FeRAM application

Published:2000-06 Issue: Volume:159-160 Page:138-142
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ito D,Yoshimura T,Fujimura N,Ito T

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. Ferroelectric Memories

2. A new solid state memory resistor

3. Ferroelectric field‐effect memory device using Bi4Ti3O12film

4. Interaction ofPbTiO3Films with Si Substrate

5. Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and Dielectric Properties of Solid Solutions Bi4+xSr2−xTixTa4−xO18 (x = 0.0, 0.5, 1.0, 1.5, 2.0);Springer Proceedings in Physics;2018

2. Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering;Journal of Alloys and Compounds;2012-07

3. Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient;Materials Chemistry and Physics;2011-11

4. Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices;Journal of Applied Physics;2008-09-15

5. Effective formation of interface controlled Y2O3 thin film on Si(100) in a metal–(ferroelectric)–insulator–semiconductor structure;Microelectronic Engineering;2008-08

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