Author:
Sudhir G.S,Fujii H,Wong W.S,Kisielowski C,Newman N,Dieker C,Liliental-Weber Z,Rubin M.D,Weber E.R
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference13 articles.
1. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Vol. III/17a and 17d, Springer, Berlin, 1982 and 1984.
2. J.H. Edgar (Ed.), Properties of Group III Nitrides, London: INSPEC, Institution of Electrical Engineers, EMIS datareviews series, 11, c1994.
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN Growth Using GaN Buffer Layer
5. GaN, AlN, and InN: A review
Cited by
30 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献