Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V

Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements

Published:2003-06 Issue:1-4 Volume:216 Page:192-197
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sawada T,Izumi Y,Kimura N,Suzuki K,Imai K,Kim S.-W,Suzuki T

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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5. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

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