Author:
Chambers J.J.,Busch B.W.,Schulte W.H.,Gustafsson T.,Garfunkel E.,Wang S.,Maher D.M.,Klein T.M.,Parsons G.N.
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference27 articles.
1. S.I. Association, The International Technology Roadmap for Semiconductors, 1999 Edition, International SEMATECH Austin, TX, 1999.
2. Reliability and integration of ultra-thin gate dielectrics for advanced CMOS;Buchanan;Microelectron. Eng.,1997
3. Transmission electron microscope structural study of Y2O3 films grown on Si(1 1 1) substrates by ultrahigh vacuum ionized cluster beam;Lee;J. Electrochem. Soc.,1999
4. Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications;Son;J. Vac. Sci. Technol. A,1998
5. B. He, T. Ma, S.A. Campbell, W.L. Gladfelter, A 1.1 nm oxide equivalent gate insulator formed using TiO2 on nitrided silicon, Tech. Dig. Int. Electron. Devices Meet. 1038 (1998).
Cited by
40 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献