Author:
Krause-Rehberg R,Börner F,Redmann F,Egger W,Kögel G,Sperr P,Triftshäuser W
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference5 articles.
1. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors, Springer, Berlin, 1999.
2. Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy
3. R. Krause-Rehberg, F. Börner, in: Proceedings of the Talk Given at PSSD-99, Hamilton, Canada, 20–23 August 1999, http://www.ep3.uni-halle.de/positrons/talks/PSSD99.pdf.
4. Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2
5. R. Krause-Rehberg, F. Börner, F. Redmann, J. Gebauer, R. Kögler, R. Kliemann, W. Skorupa, W. Egger, G. Kögel, W. Triftshäuser, Physica B 308–310 (2001) 442.
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