Influence of reactive ion etching damage on the Schottky barrier height of Ti/p

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Influence of reactive ion etching damage on the Schottky barrier height of Ti/p–Si interface

Published:2000-06 Issue: Volume:159-160 Page:186-190
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fujimura N,Yamaguchi T,Kato H,Ito T

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Al/n-Si Schottky diodes

2. Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

3. Metastable phase formation in titanium‐silicon thin films

4. T. Yamaguchi, H. Nikoh, A. Hama, N. Fujimura, T. Ito, Appl. Phys. Lett., submitted for publication.

5. Surface Modifications of Electronic Materials Induced by Plasma Etching

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of thermal annealing on Ti/p-Si Schottky diodes;Journal of Materials Science: Materials in Electronics;2021-05-14

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