Core-level photoemission study of the BiGaAs(111)A interface-Reference-Cited by-同舟云学术

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Core-level photoemission study of the BiGaAs(111)A interface

Published:2000-05 Issue:3-4 Volume:158 Page:292-300
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

McGinley C.,Cafolla A.A.,McLoughlin E.,Murphy B.,Teehan D.,Moriarty P.,Woolf D.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Theory of semiconductor surface reconstruction

2. Semiconductor Surfaces and Interfaces;Monch,1995

3. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

4. GaAs(111)A-(2×2) reconstruction studied by scanning tunneling microscopy

5. Atomic geometry of the 2×2 GaP(111) surface

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1. A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111);ACS Nano;2023-02-23

2. Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study;New Journal of Physics;2019-12-01

3. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy;AIP Advances;2017-07

4. Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE;Journal of Crystal Growth;2014-06

5. Surface-Atom Core-Level Shift in GaAs(111)A-2×2;Journal of the Physical Society of Japan;2012-06-15

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