Angle Resolved Photoemission Spectroscopy of the InP(001) surface-Reference-Cited by-同舟云学术

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Angle Resolved Photoemission Spectroscopy of the InP(001) surface

Published:2000-10 Issue:1-4 Volume:166 Page:224-230
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Frisch A.M.,Vogt P.,Visbeck S.,Hannappel Th.,Willig F.,Braun W.,Richter W.,Bernholc J.,Schmidt W.G.,Esser N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Effect of the nematic range on the critical behavior and anisotropy of the heat transport parameters at the smectic-A–nematic phase transition

2. Atomic Surface Structure of MOVPE-Grown InP(001)

3. Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE

4. Example of a Compound Semiconductor Surface that Mimics Silicon: The InP(001)-(2×1) Reconstruction

5. A missing-row dimer model of InP(100) (4×2) reconstruction as proposed by LEED, UPS and HREELS studies

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1. (Photo-)electrochemical reactions on semiconductor surfaces, part B: III-V surfaces–atomic and electronic structure;Encyclopedia of Solid-Liquid Interfaces;2024

2. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10

3. Epitaxial III-V Films and Surfaces for Photoelectrocatalysis;ChemPhysChem;2012-08-13

4. Driving forces for the adsorption of cyclopentene on InP(001);Surface Science;2011-04

5. Theory of optical excitation and relaxation phenomena at semiconductor surfaces: linking density functional and density matrix theory;Applied Physics A;2007-06-09

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