Band structure evolution in InAs overlayers on GaAs(110)-Reference-Cited by-同舟云学术

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Band structure evolution in InAs overlayers on GaAs(110)

Published:1996-09 Issue: Volume:104-105 Page:608-614
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

He Z.Q.,Ilver L.,Kanski J.,Nilsson P.O.,Songsiriritthigul P.,Holmén G.,Karlsson U.O.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Molecular beam epitaxial growth of GaAs and other compound semiconductors

2. Microscopical Structuring of Solids by Molecular Beam Epitaxy?Spatially Resolved Materials Synthesis

3. Formation and morphology of InAs/GaAs heterointerfaces

4. Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substrates

5. Vertical cavity surface emitting laser with a submonolayer thick InAs active layer

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-Assembled Monolayers of Alkanethiols on InAs;Langmuir;2009-09-24

2. Chemical and electronic properties of sulfur-passivated InAs surfaces;Surface Science;2003-01

3. Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates;Applied Physics Letters;2001-02-19

4. Present State of the Surface Potential Measurements by Kelvin Force Microscopy. Potential Measurements by KFM on InAs Thin Film Surfaces Grown on (110) GaAs Substrates.;Hyomen Kagaku;2001

5. Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05

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