Decomposition mechanism of triethylindium (TEI) on a surface studied by LEED, AES, TPD and HREELS-Reference-Cited by-同舟云学术

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Decomposition mechanism of triethylindium (TEI) on a surface studied by LEED, AES, TPD and HREELS

Published:2002-05 Issue:1-4 Volume:190 Page:279-283
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fukuda Y.,Kobayashi T.,Yoshida H.,Sekizawa T.,Sanada N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. A.C. Jones, P. O’Brien, CVD of Compound Semiconductors, VDH, Weinheim, 1997.

2. Composition and reconstruction of the GaP{100}-(4 × 2) surface

3. Ga-rich GaP(001)(2×4) surface structure studied by low-energy ion scattering spectroscopy

4. (2×4)GaP(001) surface: Atomic structure and optical anisotropy

5. The (2×4) and (2×1) structures of the clean GaP(001) surface

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Decomposition of Triethylindium;Russian Journal of General Chemistry;2018-08

2. High Resolution Electron Energy-Loss Spectroscopy;Encyclopedia of Inorganic and Bioinorganic Chemistry;2011-12-15

3. First-principles study of indium adsorption on GaP(001)(2×1) surface;Journal of Alloys and Compounds;2009-01

4. High Resolution Electron Energy-Loss Spectroscopy;Encyclopedia of Inorganic Chemistry;2008-03-15

5. First-principles study of GaP(001) surfaces;Journal of Alloys and Compounds;2007-08

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