Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing-Reference-Cited by-同舟云学术

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Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

Published:2003-12 Issue:1-4 Volume:220 Page:293-297
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim J.C.,Ji J.-Y.,Kline J.S.,Tucker J.R.,Shen T.-C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Carbide Contamination of Silicon Surfaces

2. Ideal hydrogen termination of the Si (111) surface

3. Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning

4. Some aspects of the surface behaviour of silicon

5. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces

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4. Self-assembly of dodecaphenyl POSS thin films;Surface Science;2017-12

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