Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference48 articles.
1. Nanoscale effects of arsenic kinetics on GaAs(001)-(2×4) homoepitaxy
2. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
3. Formation of ‘‘super’’ As‐rich GaAs(100) surfaces by high temperature exposure to arsine
4. Anomalous As desorption from InAs(100) 2×4
5. GaAs equilibrium crystal shape from first principles
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