Growth process of twinned epitaxial layers on Si(111)-B and their thermal stability
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. K. Akimoto, J. Mizuki, I. Hirosawa, T. Tatsumi, H. Hirayama, N. Aizaki, J. Matsui, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Business Center for Academic Societies, Tokyo, 1987, p. 463.
2. Stability of boron‐ and gallium‐induced surface structures on Si(111) during deposition and epitaxial growth of silicon
3. Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction
4. Influence of surface reconstruction on the orientation of homoepitaxial silicon films
5. Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen chemisorption on Si(111)√3×√3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy;Surface Science;2011-08
2. An STM study of Ge heteroepitaxial growth on Si(111)√3×√3-B surfaces;Surface Science;2008-11
3. Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy;Japanese Journal of Applied Physics;2005-01-11
4. Growth of Si twinning superlattice;Materials Science and Engineering: B;2001-12
5. Si Twinning Superlattice;Materia Japan;2001
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3