Plasma immersion ion implantation for shallow junctions in silicon-Reference-Cited by-同舟云学术

Plasma immersion ion implantation for shallow junctions in silicon

Published:1999-01 Issue: Volume:138-139 Page:224-227
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pintér I,Abdulhadi A.H,Makaró Zs,Khanh N.Q,Ádám M,Bársony I,Poortmans J,Sivoththaman S,Song Hai-Zhi,Adriaenssens G.J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference4 articles.

1. Diffusion of B and As from polycrystalline silicon during rapid optical annealing;Bohm;J. Appl. Phys.,1987

2. Ultra shallow junction in silicon using amorphous and polycrystalline silicon diffusion sources;Park;J. Elect. Mater.,1991

3. 50-kV pulse generator for plasma source ion implantation;Böhm;J. Vac. Sci. Tech. B,1994

4. I. Pintér, M. Ádám, Cs. Dücsô, N.Q. Khánh, I. Bársony, Plasma Immersion Doping For Silicon Solar Cell Application, Supplément á la Revue: Le Vide No. 275 Janvier-Février-Mars, 1995, p. 410.

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