Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. GaN, AlN, and InN: A review
3. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
4. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
5. Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
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1. Optical properties of amorphous GaAs1−xNx film sputtering with different N2 partial pressures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-09
2. The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition;physica status solidi (c);2004-09
3. Freestanding GaN‐substrates and devices;physica status solidi (c);2003-08-27
4. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04
5. Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy;MRS Proceedings;2001
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