Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
3. Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices
4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
5. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
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