Reduction of unintentional impurities at the interface between epitaxial layers and GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Study on the accumulated impurities at the epilayer/substrate interface and their influence on the leakage current of metal-semiconductor-field effect transistors
2. Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces
3. Origin ofn‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere
4. Proc. of 7th Int. Conf. on Indium Phosphide and Related Materials;Hollfelder,1995
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4. V-band amplifier using InGaP/InGaAs/GaAs heterostructure MESFETs with asymmetric Au gate head;IEEE Microwave and Guided Wave Letters;1998
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