New Si atomic-layer-controlled growth technique with thermally cracked hydride molecule
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy
2. Ar+-laser-assisted subatomic-layer epitaxy of Si
3. Migration-assisted Si subatomic-layer epitaxy from Si2H6
4. Saturation adsorption reaction of cracked Si2H6 on Si(001) and Ge(001)
5. Si Atomic-Layer Epitaxy Using Thermally Cracked Si2H6
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