MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection-Reference-Cited by-同舟云学术

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MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection

Published:1999-05 Issue: Volume:201-202 Page:980-984
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

de Lyon T.J,Baumgratz B,Chapman G,Gordon E,Hunter A.T,Jack M,Jensen J.E,Johnson W,Johs B,Kosai K,Larsen W,Olson G.L,Sen M,Walker B,Wu O.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band

2. MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

3. Molecular beam epitaxial growth and properties of short-wave infrared Hg0.3Cd0.7Te films

4. Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe alloys

5. Resonant enhancement of impact in Ga1−xAlxSb

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3. In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth;Earth and Space: From Infrared to Terahertz (ESIT 2022);2023-01-31

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5. Impact ionization in HgCdTe avalanche photodiode optimized to 8 µm cut–off wavelength at 230 K;Infrared Physics & Technology;2021-06

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