Study of the new β-In2S3 containing Na thin films Part I: Synthesis and structural characterization of the material
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Gas-source MBE growth of Tl-based III–V semiconductors and their Raman scattering characterization
2. Characterization of ZnSe films grown on GaAs substrates with InxGal−xAs and AlxGa1−xAs buffer layers
3. Electronic characteristics of Au/AlxGa1−xN structures grown with various x values
4. III-V compounds for solar cell applications
5. The crystal structure of β-In2S3
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1. Influence of Sn doping on particle cluster to rock-plate growth of nano-structured In 2 S 3 thin films by nebulized spray pyrolysis technique;Advances in Materials and Processing Technologies;2024-04-15
2. Influence of oxygen content on the properties of In2(OxS1−x)3 used as buffer material in Cu(In,Ga)Se2 solar cells;Journal of Applied Physics;2024-02-15
3. Elucidating the local structure of V substitutes in In2S3 as potential intermediate band material by x-ray absorption spectroscopy and first principles calculations;Journal of Physics: Energy;2023-06-06
4. A modeling study on utilizing In2S3 as a buffer layer in CIGS-based solar cells;Journal of Computational Electronics;2022-08-13
5. Post-deposition Metal Halide Treatment of CuGaSe2 for Photovoltaic Application;2022 IEEE 49th Photovoltaics Specialists Conference (PVSC);2022-06-05
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