Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Development of Pure Green LEDs Based on ZnTe
2. Analysis of strain and impurity distribution in II–VI epilayers with optical methods
3. Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb
4. Metalorganic chemical vapor deposition growth of ZnTe on GaAs
5. Low pressure metalorganic vapour-phase epitaxy growth of ZnTe using triethylamine dimethyl zinc adduct
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2. Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source;Japanese Journal of Applied Physics;2023-05-04
3. Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy;Superlattices and Microstructures;2018-02
4. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting;Materials Research Express;2016-03-07
5. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE;Chinese Physics B;2015-12
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