Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor-Reference-Cited by-同舟云学术

Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor

Published:2003-10 Issue:1-2 Volume:258 Page:135-140
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bayaz A.Al,Giani A.,Khalfioui M.Al,Foucaran A.,Pascal-Delannoy F.,Boyer A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

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4. Narrow-bandgap semiconductor-based thermal sensors

5. Bi2Se3 Hall Effect Magnetometer for Reliable Low Temperature Use

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