Author:
Yang Deren,Li Chunlong,Luo Muchang,Xu Jin,Que Duanlin
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Oxygen precipitation in antimony-doped silicon
2. Behavior of oxygen in the crystal formation and heat treatment of silicon heavily doped with antimony
3. H. Walitzki, H.J. Rath, J. Reffle, S. Pahlke, M. Blatte, Semiconductor Silicon, The Electrochemical Society, Pennington, NJ. 1986, p. 86.
4. Determination of oxygen concentration in heavily Sb-doped Si by means of coincident elastic recoil detection analysis
5. F. Shimura, W. Dyson, J. W. Moody R. S. Hockett, in: VLSI Science and Technology 1985, The Electrochemical Society, Pennington, NJ. 1985, p. 57.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献