Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Author:

Yang Deren,Li Chunlong,Luo Muchang,Xu Jin,Que Duanlin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Oxygen precipitation in antimony-doped silicon

2. Behavior of oxygen in the crystal formation and heat treatment of silicon heavily doped with antimony

3. H. Walitzki, H.J. Rath, J. Reffle, S. Pahlke, M. Blatte, Semiconductor Silicon, The Electrochemical Society, Pennington, NJ. 1986, p. 86.

4. Determination of oxygen concentration in heavily Sb-doped Si by means of coincident elastic recoil detection analysis

5. F. Shimura, W. Dyson, J. W. Moody R. S. Hockett, in: VLSI Science and Technology 1985, The Electrochemical Society, Pennington, NJ. 1985, p. 57.

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