Influence of distributed defects on the photoelectric characteristics of a large-area device-Reference-Cited by-同舟云学术

Influence of distributed defects on the photoelectric characteristics of a large-area device

Published:2000-03 Issue:1-3 Volume:210 Page:375-378
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sopori Bhushan,Chen Wei

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. B. Sopori, in: G. Davies, M.H. Nazare (Eds.), Proceedings of ICDS-19, Trans. Tech. Pub., 1997, p. 527.

2. B.L. Sopori, L. Jastrzebski, T.Y. Tan, S. Narayanan, Proceedings of the 12th PVSEC, 1994, p. 1003.

3. Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells

4. B.L. Sopori, W. Chen, K. Nemire, J. Gee, S. Ostapenko, Proceedings of the Second World Conference on Photovoltaic Solar Energy Conversion, Vienna, 1998, p. 152.

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