Growth morphology of primary silicon in cast Al–Si alloys and the mechanism of concentric growth-Reference-Cited by-同舟云学术

Growth morphology of primary silicon in cast Al–Si alloys and the mechanism of concentric growth

Published:1999-11 Issue:1-2 Volume:207 Page:43-54
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Ru-yao,Lu Wei-hua,Hogan L.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

2. Wei-hua Lu, A method to prepare specimens for observing microstructure of Al–Si alloys, Chinese Patent No. 861 024 087, 9 April 1986.

3. J.W. Faust Jr., H.F. John, S.O. Hara, in: Schroeder (Ed.), Microsegregation Phenomena in Semi Conductor Crystals, Interscience Publishing, New York, pp. 181–189.

4. Impurity Distributions in Single Crystals

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