Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra
2. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
3. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
4. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence
5. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors
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1. Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics;Semiconductors;2018-04
2. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02
3. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers;Semiconductors;2015-02
4. Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates;Semiconductors;2014-05
5. Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures;Superlattices and Microstructures;2012-10
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