Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Published:1997-05 Issue: Volume:175-176 Page:72-78
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Johnson M.A.L.,Hughes W.C.,Rowland W.H.,Cook J.W.,Schetzina J.F.,Leonard M.,Kong H.S.,Edmond J.A.,Zavada J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. GaN, AlN, and InN: A review

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

4. Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

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2. Raman spectroscopy of epitaxial InGaN/Si in the central composition range;Japanese Journal of Applied Physics;2019-05-14

3. Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD;Journal of Alloys and Compounds;2018-02

4. Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique;Applied Physics Express;2016-06-24

5. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08

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