Structure and thermal stability of MOCVD ZrO2 films on Si (100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Band offsets of wide-band-gap oxides and implications for future electronic devices
3. Thermodynamic stability of binary oxides in contact with silicon
4. Physical and Electrical Characterization of ZrO[sub 2] Gate Insulators Deposited on Si(100) Using Zr(O[sup i]-Pr)[sub 2](thd)[sub 2] and O[sub 2]
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