Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1−xAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
2. Liquid-phase epitaxy of AlxGa1 − xAs and technology for tandem solar cell application
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5. Interfacial Energies Providing a Driving Force for Ge/Si Heteroepitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observation of Ultrathin Precursor Film Formation during Ge–Si Liquid-Phase Epitaxy from an Undersaturated Solution;Langmuir;2017-01-09
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS;The European Physical Journal Applied Physics;2011-08-18
4. Two-Dimensional Crystal Growth from Undersaturated Solutions;Langmuir;2007-04-25
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