Shallow donors in ultrathin nitrogen-doped ZnSe layers – a novel or a disregarded compensation mechanism in II–VI device structures?
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Compensation processes in nitrogen doped ZnSe
2. A compensating donor with a binding energy of 57 meV in nitrogen‐doped ZnSe
3. Deep-center photoluminescence in nitrogen-doped ZnSe
4. Spin-flip Raman-scattering studies of compensating donor centers in nitrogen-doped zinc selenide grown by molecular-beam epitaxy
5. Spectroscopy of donor-acceptor pairs in nitrogen-doped ZnSe
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1. EXAFS study of the temperature dependence of the Debye–Waller factor in ZnSe zincblende compound;Physica Scripta;2020-02-17
2. Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor;Physical Review Letters;2002-10-08
3. Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers;physica status solidi (b);2002-01
4. ZnSe: ionization and excitation energies of acceptors (impurities and defects);New Data and Updates for II-VI Compounds
5. ZnSe: donor-acceptor pairs;New Data and Updates for II-VI Compounds
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