Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe-Reference-Cited by-同舟云学术

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Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe

Published:2000-06 Issue:3-4 Volume:213 Page:308-311
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Daizong,Huang Changjun,Cheng Buwen,Wang Hongjie,Yu Zhuo,Zhang Chunhui,Yu Jinzhong,Wang Qiming

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures

2. Anomalous strain relaxation in SiGe thin films and superlattices

3. Gallium arsenide and other compound semiconductors on silicon

4. Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Detection of Strain-Relaxed Si1–xGex Alloys With High Ge-Content by Optical Second-Harmonic Generation;IEEE Journal of Quantum Electronics;2015-12

2. Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy;Physica B: Condensed Matter;2010-08

3. Nanoscale strain analysis of Si/Ge heterostructures;2008 2nd IEEE International Nanoelectronics Conference;2008

4. A method to estimate the strain state of SiGe/Si by measuring the bandgap;Acta Physica Sinica;2005

5. Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD);Solid State Phenomena;2003-09

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