Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
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3. Atomic-Layer Etching of a Br-Saturated Si(111)-7× 7 Surface by Using Scanning Tunneling Microscope
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4. Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells;Thin Solid Films;2007-03
5. Influence of GaNAs strain-compensation layers on the optical properties of GaIn(N)As∕GaAs quantum wells upon annealing;Journal of Applied Physics;2006-03
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